Methods of forming portions of near field transducers (NFTS) and articles formed thereby

ABSTRACT

Methods that include forming at least a portion of a near field transducer (NFT) structure; depositing a material onto at least one surface of the portion of the NFT to form a metal containing layer; and subjecting the metal containing layer to conditions that cause diffusion of at least a portion of the material into the at least one surface of the portion of the NFT; and devices formed thereby.

RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/089,939, filed Apr. 4, 2016 and now U.S. Pat. No. 9,842,613 and whichis a continuation of U.S. patent application Ser. No. 14/266,920, filedMay 1, 2014, now U.S. Pat. No. 9,305,572, the disclosures of which areincorporated herein by reference thereto.

SUMMARY

Disclosed are methods that include forming at least a portion of a nearfield transducer (NFT) structure; depositing a material onto at leastone surface of the portion of the NFT to form a metal containing layer;and subjecting the metal containing layer to conditions that causediffusion of at least a portion of the material into the at least onesurface of the portion of the NFT.

Also disclosed are methods that include forming at least a portion of anear field transducer (NFT) structure; depositing a material onto atleast an air bearing surface of the NFT to form a metal containinglayer; subjecting the metal containing layer to conditions that causediffusion of at least a portion of the material into the at least onesurface of the portion of the NFT; removing at least a portion of themetal containing layer; and applying an overcoat layer.

Further disclosed are methods that include forming at least a portion ofa near field transducer (NFT) structure; depositing a material onto atleast an air bearing surface of the NFT to form a metal containinglayer; removing a portion of the metal containing layer not on the airbearing surface of the NFT; subjecting the metal containing layer toconditions that cause diffusion of at least a portion of the materialinto the at least one surface of the portion of the NFT; removing atleast a portion of the metal containing layer; and applying an overcoatlayer.

The above summary of the present disclosure is not intended to describeeach disclosed embodiment or every implementation of the presentdisclosure. The description that follows more particularly exemplifiesillustrative embodiments. In several places throughout the application,guidance is provided through lists of examples, which examples can beused in various combinations. In each instance, the recited list servesonly as a representative group and should not be interpreted as anexclusive list.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a flow chart depicting exemplary embodiments of disclosedmethods.

FIGS. 2A through 2D depict cross sections of an article at variousstages during exemplary disclosed methods.

FIGS. 3A through 3E depict cross sections of an article at variousstages during exemplary disclosed methods.

FIG. 4 is a perspective view of an exemplary NFT that includes a peg anda disc.

FIG. 5 is a cross section of an exemplary article.

FIG. 6A shows a transmission electron microscope (TEM) image of anexemplary 25 Å Sn/20 Å Cr/20 Å DLC sample; FIG. 6B is anenergy-dispersive x-ray (EDX) mapping showing the Cr and Snconcentration at the portion of FIG. 6A shown by the box; FIG. 6C is aEDX mapping showing the Cr concentration at the portion of FIG. 6A shownby the box; and FIG. 6D is a EDX mapping showing the Sn concentration atthe portion of FIG. 6A shown by the box.

FIG. 7A shows a TEM image of an exemplary 25 Å 25 Å Pt/20 Å Cr/20 Åsample; FIG. 7B is an EDX mapping showing the Cr and Sn concentration atthe portion of FIG. 7A shown by the box; FIG. 7C is a EDX mappingshowing the Cr concentration at the portion of FIG. 7A shown by the box;and FIG. 7D is a EDX mapping showing the Sn concentration at the portionof FIG. 7A shown by the box.

FIG. 8A shows a TEM image of an exemplary 25 Å 30 Å Ni/20 Å Cr/20 Å DLCsample; FIG. 8B is an EDX mapping showing the Cr and Sn concentration atthe portion of FIG. 8A shown by the box; FIG. 8C is a EDX mappingshowing the Cr concentration at the portion of FIG. 8A shown by the box;and FIG. 8D is a EDX mapping showing the Sn concentration at the portionof FIG. 8A shown by the box.

The figures are not necessarily to scale. Like numbers used in thefigures refer to like components. However, it will be understood thatthe use of a number to refer to a component in a given figure is notintended to limit the component in another figure labeled with the samenumber.

DETAILED DESCRIPTION

Heat assisted magnetic recording (HAMR) uses a source of energy, forexample a laser, to increase the temperature of media above its curietemperature, to enable magnetic recording at smaller areal densities. Todeliver the energy (for example) to a small area (on the order of 20 to50 nanometers (nm) for example) of the medium, a near field transducer(NFT) can be utilized. During recording processes, the NFT and poleabsorb energy from the energy source, causing an increase in thetemperature of the NFT (sometimes up to 400° C. for example). Some NFTsinclude a small peg and a large disk. The high temperatures reached bythe NFT and pole can cause oxidation of the pole, corrosion of the pole,diffusion of atoms from the peg to the disk, or combinations thereof,and can thereby cause damage to the pole and deformation and recessionof the peg.

Disclosed methods and devices may provide NFTs that suffer less fromdeformation and recession. Disclosed methods and devices can form and/orinclude pegs having a material that has diffused into the peg from anexternal layer. Methods include forming a metal containing layer on atleast one surface of the NFT and forcing at least some of that layer todiffuse into the NFT.

In some embodiments, methods disclosed herein can be represented by theflow chart shown in FIG. 1. As such, in some methods a first step caninclude step 105, forming at least a portion of a near field transducer(NFT) structure. Step 105 can include one or more than one individualstep, for example. The step, 105 of forming at least a portion of a NFT,can include various processes and methods. In some embodiments NFTs thatare commonly referred to as “disc and peg” type can be formed herein. Insome embodiments, at least a peg of a disc and peg type NFT can beformed as part of some disclosed methods. The peg can be at variousstages of manufacture, for example. In some embodiments, the peg can bea peg within a larger device structure that has been exposed to lapping,e.g., lapping to form an air bearing surface (ABS).

The step of forming at least a portion of a NFT can include utilizingone or more than one material to form the portion (or more) of the NFT.In some embodiments, various materials including, for example, gold(Au), silver (Ag), copper (Cu), alloys thereof, or other materials canbe utilized to form the at least a portion of the NFT.

Some disclosed methods can include a next step, step 110, of depositinga layer. In some embodiments, the layer can be deposited on at least onesurface of at least the portion of the NFT. In some embodiments, thelayer deposited in step 110 can be referred to as a metal containinglayer. The metal containing layer includes at least one material thatcan diffuse (either with or without outside influence) into the surfaceupon which it is deposited. The metal containing layer can be depositedusing known methods including for example deposition methods such aschemical vapor deposition (CVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), plating (e.g., electroplating), sputteringmethods, cathodic arc deposition methods, ion implantation method andevaporative methods.

In some embodiments, the metal containing layer can have any desirablethickness and can even have a variable thickness. In some embodiments,the metal containing layer can have a thickness of not more than 10nanometers (nm), or not more than 5 nm for example. In some embodiments,the metal containing layer can have a thickness of greater than 0.1 nm,or greater than 0.5 nm for example. It should be noted that a metalcontaining layer can refer to more than one discrete metal containinglayer even if the discrete layers are not in contact with each other.

The metal containing layer can include various materials or a singlematerial. In some embodiments, the material of the metal containinglayer can include materials that have relatively good adhesion to thematerial(s) of the NFT portion of interest, relatively high diffusioncoefficient at the interface of the metal containing layer and theportion of the NFT, relatively high oxidation resistance, relatively lowdiffusion in the bulk of the material of the NFT, or any combinationthereof.

The metal containing layer can include a single layer or more than onelayer. In some embodiments where the metal containing layer is a singlelayer, it can include an intermetallic phase or a material that can forman intermetallic phase (which can provide high thermal stability,oxidation resistance, or both). In some embodiments, the metalcontaining layer can be a multilayer structure that includes at leasttwo layers. In such cases, the multilayer could be used to produce anintermetallic phase. In some embodiments, a multilayer metal containinglayer can also include one or more layers whose material may be chosento provide some processing advantage.

In some embodiments, a metal containing layer can include aluminum (Al),nickel (Ni), chromium (Cr), platinum (Pt), lead (Pb), copper (Cu),yttrium (Y), silicon (Si), indium (In), tin (Sn), cobalt (Co), boron(B), titanium (Ti), tantalum (Ta), niobium (Nb), magnesium (Mg),zirconium (Zr), Radon (Ra), hafnium (Hf), vanadium (V), manganese (Mn),iron (Fe), palladium (Pd), silver (Ag), zinc (Zn), holmium (Ho), erbium(Er), phosphorus (P), or combinations thereof. Exemplary multilayerstructures could include Al/Au, Ni/Cr, Ni/Al, Cr/Al, and Ni/Au, forexample. In some embodiments, the metal containing layer could includeCr, Pt, Pb, Ni, Si, In, Sn, Al, Co, B, or combinations thereof, forexample. In some embodiments, the metal containing layer could includeCr, Sn, Pt, Y, Pd, Mn, Cu, In, Ni or combinations thereof. In someembodiments, the metal containing layer could include Ni/Cr, Al/Au, orNi/Al, for example.

In some embodiments, a metal containing layer can include two (or more)layers of different (or the same) materials. In some embodiments, asecond layer, not in contact with the NFT can be referred to as an outerlayer. For example, an outer layer could be chosen based on various waysof removing that material. As a specific example, an outer layer couldbe chosen such that a particular chemical etching process, for example areactive plasma etch could be used to remove the outer layer. Oneparticular type of outer layer that could be utilized to provide suchcharacteristics could be an Si containing (e.g., a SiO₂ containing)layer, that can be removed using fluorine based chemistries (e.g., CF₄,SF₆, or CHF₃) for example. An even more specific example of a multilayerstructure that could be chosen by considering such a property is amultilayer metal containing layer that contains a chromium (Cr) NFTadjacent layer and a SiO₂ outer layer. Such a multilayer structure couldbe processed using a fluorine chemistry which could remove the outerSiO₂ layer and stop on the Cr layer. The excess Cr layer could theneither be ion milled away or oxidized.

Another example of a multilayer metal containing layer that could beadvantageous because of processing characteristics could include anouter layer that could act as a gas barrier layer and an underlying (NFTadjacent) metallic layer. The outer layer functioning as a gas barrierlayer could function to prevent the oxidation of the underlying metalliclayer during annealing. Particular examples of materials that couldfunction as gas barrier layers could include, for example, a metal layerthat is relatively resistant to oxidation (e.g., Pt, Pd), a metal layerthat could be oxidized to form an oxide layer (e.g., Cr, Si, Al, Ti, Mn,or Ta), diamond like carbon (DLC), nitrides, carbides, and oxides.Specific oxides could include for example CrO, SiO₂ and AlO. Specificnitrides could include SiN, TiN, ZrN, TiAlN, CrN and TiSiN for example.

Another example of a multilayer metal containing layer is one thatincludes a NFT adjacent layer having desirable properties (relativelygood adhesion to the material(s) of the NFT portion of interest,relatively high diffusion coefficient at the interface of the metalcontaining layer and the portion of the NFT, relatively high oxidationresistance, relatively low diffusion in the bulk of the material of theNFT, or any combination thereof) and an outer layer that can be oxidizedto form an oxide having desired properties. Properties that may berelevant for the outer layer can include, for example a material thatwould be likely to form a dense oxide upon oxidation that is relativelyhighly corrosion resistant, a material that has a low refractive index(n) upon oxidation, a low optical absorption (k) upon oxidation, or somecombination thereof.

In some embodiments, a metal containing layer can be deposited on one ormore than one surface of a portion of a NFT. In some embodiments, forexample, a metal containing layer can be deposited on one or more thanone surface of a peg of a NFT. In some embodiments, for example, a metalcontaining layer can be deposited on at least the air bearing surface(ABS) of a peg of a NFT. In some embodiments, for example, a metalcontaining layer (or discrete layers of a metal containing layer) can bedeposited on all exposed surfaces of a peg. In some embodimentstherefore each exposed surface of the peg could have a metal containinglayer thereon. The metal containing layers on the exposed surfaces ofthe peg need not be physically in contact with each other and can bediscrete layers.

In some embodiments, for example, a metal containing layer can bedeposited on five exposed surfaces of a peg of a NFT. FIG. 4 shows anexample of a peg and disc type NFT. The NFT in FIG. 4 includes a peg 405and a disc 410. The peg 405 shown in FIG. 4 includes five surfaces, anair bearing surface 406, a second surface 407, a third surface 408, afourth surface 409, and a fifth surface 411. In some embodiments atleast the air bearing surface 406 of the peg 405 of the NFT has a metalcontaining layer deposited thereon. In some embodiments, only the airbearing surface 406 of the peg 405 of the NFT has a metal containinglayer deposited thereon. In some embodiments, all five surfaces 406,407, 408, 409, and 411 of the peg 405 of the NFT having a metalcontaining layer deposited thereon.

Some disclosed methods can include a next step, step 115, of subjectingat least the metal containing layer to conditions that cause diffusionof at least some of the material of the metal containing layer into atleast a portion of the surface of the portion of the NFT structure. Thisstep can include subjecting only the metal containing layer, only aportion of the metal containing layer, at least some portion of themetal containing layer and at least some portion of the portion of theNFT, or any combination thereof to conditions that cause diffusion ofthe material of the metal containing layer into at least a portion ofthe surface of the NFT structure. In some embodiments, this step cancause diffusion of more material of the metal containing layer into theportion of the NFT than would otherwise be caused without the step beingundertaken.

In some embodiments, step 115 can include annealing at least the metalcontaining layer. In some embodiments, the NFT structure, the metalcontaining layer and other portions of the structure containing the samecan be annealed. Annealing can be accomplished through oven annealing,laser annealing, vacuum annealing, inductive heating, rapid thermalannealing, or electron beam heating annealing for example.

In some embodiments, oven annealing can be utilized. Oven annealing canbe described by an average temperature that at least the metalcontaining layer is subjected to (e.g., the temperature the oven is setto or the temperature the oven attains), or by the temperature that atleast the metal containing layer is raised to. In some embodiments, ovenannealing can be described by the average temperature that at least themetal containing layer is subjected to. In such embodiments, ovenannealing can include subjecting at least the metal containing layer toa temperature of at least 100° C. In some embodiments, oven annealingcan include subjecting at least the metal containing layer to atemperature of at least 150° C. In some embodiments, oven annealing caninclude subjecting at least the metal containing layer to a temperatureof at least 200° C. In some embodiments, oven annealing can includesubjecting at least the metal containing layer to a temperature of notmore than 250° C. In some embodiments, oven annealing can includesubjecting at least the metal containing layer to a temperature of notmore than 225° C.

In some embodiments, laser annealing can be utilized. Generally, laserannealing refers to the use of a laser to expose a material to radiationin order to heat the material. In the context of disclosed methods,laser annealing refers to the use of a laser to expose at least themetal containing layer to energy in order to cause at least a portion ofthe material of the metal containing layer to diffuse into the NFT. Insome embodiments, wavelengths, intensity, duty cycles, or somecombination thereof can be chosen in order to attain a desiredtemperature of at least some portion of the metal containing layer. Insome embodiments, laser annealing can be configured to heat at leastsome portion of the metal containing layer to a temperature of at least100° C. In some embodiments, laser annealing can be configured to heatat least some portion of the metal containing layer to a temperature ofat least 150° C. In some embodiments, laser annealing can be configuredto heat at least some portion of the metal containing layer to atemperature of at least 200° C. In some embodiments, laser annealing canbe configured to heat at least some portion of the metal containinglayer to a temperature of not greater than 600° C. In some embodiments,laser annealing can be configured to heat at least some portion of themetal containing layer to a temperature of not greater than 225° C. Insome embodiments, the laser anneal step can be carried out using awavelength of not more than 2000 nm. In some embodiments, the laseranneal step can be carried out using a wavelength of at least 100 nm. Insome embodiments, the laser anneal step can be carried out by coupling alaser to the peg through a waveguide in the slider at a power of notless than 30 milliWatts (mW), or not greater than 150 mW for anywherefrom a few seconds to a few days, for example.

In some embodiments, step 115 can include applying an electrical bias(for example a negative electrical bias) to the substrate while a metalcontaining layer is being deposited. In such embodiments, the step 110and the step 115 are carried out at least somewhat at the same time.Application of an electrical bias can increase the energy of the ionsduring deposition. The bombardment of energetic ions can thereby causelocalized heating, which can cause diffusion of at least some of thematerial of the metal containing layer into at least a portion of thesurface of the NFT. In some embodiments, a negative electrical bias canbe at least 200 V. In some embodiments, a negative electrical bias canbe at least 10 V. In some embodiments, the electrical bias can be notgreater than 1000 V. In some embodiments, the electrical bias can be notgreater than 100 killivolts (kV). The bias (e.g., the negative bias)could be a direct current (DC) bias or a pulsed bias.

Disclosed methods can also include an optional step of oxidation (shownin FIG. 1 as step 125) can be utilized to oxidize at least a portion ofthe metal containing layer. The step of oxidizing, step 125, can beundertaken before the step of causing diffusion of at least a portion ofthe metal containing layer (step 115), sometime after step 115, or both.In some embodiments where the metal containing layer includes an outerlayer, step 125 can be undertaken at least before the diffusion step. Insuch embodiments, the material of the outer layer can be chosen so thatit forms an oxide layer having desirable properties. Exemplary desiredproperties can include, for example protection of a NFT adjacent layerof a metal containing layer. Exemplary materials that can be chosen foran outer layer that may be oxidized can include, for example materialsthat may include Si, Ta, Al, Mg, Y, Mn, or Cr.

An optional oxidation step can also be useful when an outer layer of themetal containing layer is chosen as one that will provide a dense oxidelayer upon oxidation. In such embodiments, the optional oxidation stepis carried out so at least a portion of the outer layer is oxidized.

Commonly utilized oxidation processes, including for example thermaloxidation, plasma oxidation, inductively coupled plasma (ICP) oxidation,remote plasma oxidation, ozone oxidation, and otherwise exposing thematerials to an oxidizing environment could be utilized in step 125. Insome embodiments, methods that include an outer layer in the metalcontaining layer and optional step 125 can eliminate the need to removea cap layer. In some embodiments, the materials surrounding the NFT mayalso be dielectric materials that have a relatively small coefficient ofthermal expansion, a relatively large lattice difference with thematerial of the NFT (for example gold), or combinations thereof. Thiscould desirably cause high density defects to form at the interface ofthe NFT and diffusion layer.

Step 140 is another optional step that could be included in disclosedmethods. Step 140 includes stressing the metal containing layer.Stressing the metal containing layer could be accomplished using thermalstress, mechanical stress, or some combination thereof. The stressingcould also be applied cyclically, for example. Step 140 could beundertaken before step 115 (subjecting the metal containing layer toconditions that cause diffusion), during step 115, or both. Applicationof stress may improve the metal atom diffusion through the interface ofthe NFT, and could therefore improve coverage of the NFT peg by thediffusion layer.

Some disclosed methods can also include an optional step, step 145, ofremoving at least a portion of the metal containing layer beforediffusion. It should also be noted that methods that include this stepmay be considered similar to methods where a metal containing layer isdeposited on less than the entire surface of the article on (or in)which the NFT exists. In some embodiments, the metal containing layercan be removed from particular portions of the overall substrate. Forexample, in some embodiments where a substrate includes, not only a NFT,but also a magnetic reader, it may be advantageous if the metalcontaining layer is not diffused into the magnetic reader and as suchthe metal containing layer overlying the magnetic reader can be removedbefore diffusion.

In some embodiments, step 145 can be accomplished usingphotolithographic methods. Exemplary photolithographic methods caninclude, for example deposition of a photoresist to the metal containinglayer. The surface can then be exposed to UV light while protecting theregions where the metal containing layer is desired. The regions of thephotoresist exposed to UV light can then be removed using solvent orplasma etching. The unprotected (not covered by the remainingphotoresist) metal containing layer can then be removed, by for example,plasma etching or chemical etching. The metal containing layer remainingcan then be diffused. In some embodiments, a patterning step (forexample a photolithographic process) can be used to remove a metalcontaining layer from the region overlying a magnetic reader, from allsurfaces except the peg, from all surfaces except the write pole, orsome combination thereof.

Some disclosed methods can also include an optional step, step 120,removing at least a portion of one or more deposited layers. Thisoptional step can function to remove some portion of the metalcontaining layer material that did not diffuse into the underlying NFT,some portion of an outer layer of the metal containing layer, someoxidized portion of the metal containing layer, or some combinationthereof.

In some embodiments, a single layer metal containing layer can beintentionally deposited at a thickness that is in excess of any amountthat could diffuse into the NFT and this optional step is designed toremove at least some of that excess material from the surface of theNFT. Removal of the excess metal containing layer can function toprevent reader shunting in a final article made using disclosed methods.

In some embodiments, an optional removal step can function to remove atleast a portion of some outer layer of a metal containing layer (eitheroxidized or un-oxidized). Such a removal step could be designed todecrease the height or thickness of the overall article, removalmaterials with unwanted properties (e.g., unwanted electrical,mechanical or chemical properties), or some combination thereof.

Removal of at least a portion of a metal containing layer can beaccomplished using various methods, which can be chosen at least in parton the identity of the material to be removed. Exemplary processes caninclude, for example, ion milling, reactive ion etching, plasma etching,or wet etching. In some embodiments, more than one process can be usedin a removal step. In some embodiments two (or more) different processescan be used to remove two different layers in a metal containing layer.In some embodiments two (or more) different processes can be used toremove a single layer in a metal containing layer. In embodiments,discussed above for example, that include more than one type of materialin the metal containing layer, one (or more) of the materials or layersmaking up the metal containing layer can be chosen based at least inpart on a chosen or desired method (or methods) of removing at least aportion of the metal containing layer.

In some embodiments, the optional step of removing at least a portion ofthe metal containing layer can leave some portion of the metalcontaining layer on the NFT. In some embodiments, not more than 0.5 nmof the metal containing layer remains on the surface of the NFT. In someembodiments, not more than 2 nm of the metal containing layer remains onthe surface of the NFT.

In some embodiments, a removal step does not remove any portion of theNFT structure originally formed in the method. For example, in someembodiments, a removal step in disclosed methods does not remove anyportion of the peg of the NFT.

Exemplary processes and methods that can be utilized in a removalstep(s) can include, for example, ion milling, reactive ion etching,plasma etching, wet etching, or some combination thereof could beutilized. A specific exemplary embodiment could include removal of a DLClayer (exemplary outer layer of a metal containing layer) and excessmetallic layer (exemplary NFT adjacent layer) by ion milling at glazingincidence or inductively coupled plasma (ICP) reactive ion etching (ME)to uniformly remove the materials with a high level of control. Also,ICP ME may allow for selectively removing the NFT adjacent layermaterial over the underlying metal of the NFT (for example gold).

Some disclosed methods can also include an optional step of depositing asubsequent layer, step 135. Deposition of a subsequent layer can occurat any time, and in some embodiments can occur after some portion of themetal containing layer has been caused to diffuse into the NFT. Thesubsequent layer can be the same material as some portion of the metalcontaining layer or a different material. In some embodiments, at leasta portion of the metal containing layer will have already been diffusedinto the NFT and at least some portion of the remaining metal containinglayer will have been removed before a subsequent layer is deposited. Insuch embodiments, the subsequent layer can include, for example a metal.In some embodiments, the subsequent layer can be the same material asone in a NFT adjacent portion of the metal containing layer. It isthought, but not relied upon that a subsequent layer such as this, onceoxidized will form a denser oxide than the remaining metal containinglayer would have if oxidized. A denser oxide layer may be advantageousin providing higher corrosion resistance.

In some embodiments that include a subsequent layer, the material of themetal containing layer can be chosen for its adhesion properties to thematerial of the NFT (e.g., the material of the peg, for example gold),its oxidation resistance, and its diffusion rate in the gold lattice (itis desired that the diffusion rate in the gold lattice be low to keep itat the outermost surface of the NFT); and the material of the subsequentlayer can be chosen for its ability to form a dense oxide layer uponoxidation. In some embodiments, the subsequent layer can include Si, Ta,Al, Mg, Cr, Y, or combinations thereof.

In some embodiments, the material of layers surrounding the NFT (forexample the materials of the core to NFT space (CNS), the pole to NFTspace (PNS), or both), and/or materials formed using disclosed methodscan be chosen so that those materials have a small coefficient ofthermal expansion, large lattice difference with the NFT material, orsome combination thereof. These properties can be advantageous becausethey can cause a higher density of defects to form at the interface ofthe NFT. The higher density of defects could make it easier for thematerial of the metal containing layer to diffuse into the NFT (e.g.,the intermixed layer) and may thereby contribute to a higher thermalstability of the NFT.

Some disclosed methods can include another optional step, step 130,deposing an overcoat material. Step 130 can be undertaken after aportion of the metal containing layer has been removed or withoutremoval of a portion of the metal containing layer. The overcoatmaterial deposited in this step can include overcoat material andmethods of deposition that are typically utilized.

Disclosed methods can include one or more than of the optional steps inFIG. 1. Furthermore, as applicable, some of the steps can be undertakenmore than once in a disclosed method; and the order of the steps is notnecessarily only as depicted and/or discussed herein.

FIGS. 2A to 2D show an exemplary device at various stages of anexemplary process of making. An exemplary device, shown in FIG. 2Aincludes a core to NFT space (also referred to CNS) 202, a seed layer204, a peg 206 of a NFT, a pole to NFT space (also referred to as PNS)208 and a pole 210. Deposited or located on at least one surface of thepeg 206 of the NFT is a metal containing layer 212. The metal containinglayer 212 can include materials and be deposited as discussed above. Insome embodiments, the metal containing layer 212 can be deposited on theair bearing surface (ABS) of a head that includes a NFT at the stage inprocess after which it has been lapped. Although not shown in FIG. 2A,the metal containing layer 212 can include an optional outer layer onthe surface of the depicted metal containing layer 212. The optionalouter layer can include materials and be deposited as discussed above.

FIG. 2B shows the exemplary device after the metal containing layer hasbeen made to diffuse into the NFT. This can be accomplished usingvarious methods, such as those discussed above. A device at this pointincludes the CNS 202, seed layer 204, NFT 206, PNS 208, a pole 210 andin some embodiments, at least some of the metal containing layer 212remains. The device also includes an intermixed layer 214. Theintermixed layer 214 is formed when some of the material of the metalcontaining layer 212 diffuses into the material of the NFT 206. Theintermixed layer 214 surrounds at least a portion of the NFT 206, forexample the peg of the NFT. In some embodiments, the intermixed layer214 surrounds five surfaces of the peg. The intermixed layer 214 cangenerally be described as a layer that was formerly a part of the NFT206, but due to the step of causing diffusion of the metal containinglayer, now contains a mixture of material from the metal containinglayer and the NFT material. In some embodiments, the intermixed layer214 can be described by a thickness. The thickness of the intermixedlayer 214 can also be described by how far the atoms of the metalcontaining layer diffuse into the material of the NFT. In someembodiments, the intermixed layer 214 can have a thickness of notgreater than 100 nm. In some embodiments, the intermixed layer 214 canhave a thickness of not greater than 10 nm. In some embodiments, theintermixed layer 214 can have thickness of not less than 1 nm. In someembodiments, the intermixed layer 214 can have a thickness of not lessthan 0.1 nm.

The device in FIG. 2B also shows a pole intermixed layer 216. A poleintermixed layer 216 can be present in situations in which the metalcontaining layer 212 was deposited over the NFT 206 and the pole 210 andconditions to cause diffusion of the metal containing layer were alsoapplied to the region of the pole 210. The pole intermixed layer 216, ifpresent may be advantageous because it can prevent or minimize oxidationand/or corrosion of the pole.

FIG. 2C shows the exemplary device after a removal step. The deviceshown in FIG. 2C includes the CNS 202, the seed layer 204, the NFT 206,the PNS 208 and the pole 210 as discussed above. The device alsoincludes an intermixed layer 215 and a pole intermixed layer 217. Theintermixed layer 215 and the pole intermixed layer 217 depicted at thisstage may be the same as the intermixed layer 214 and the poleintermixed layer 216 depicted in FIG. 2B, or they may be different inthat some portion thereof could have been removed in the removal step.Removal of the metal containing layer 212 can be accomplished asdiscussed above, for example using ion milling, reactive ion etching,plasma etching, or wet etching. Removal of the entirety of the metalcontaining layer 212 can be advantageous because it can preventelectrical shunting of a reader which may also be included in the device(but not depicted). In some embodiments, where an outer layer (such asDLC for example) is included in a metal containing layer, the outerlayer and the NFT adjacent layer can be removed, for example with ionmilling at glazing incidence or ion conductive plasma (ICP) reactive ionetching (ME) in order to uniformly remove the DLC and the excess NFTadjacent layer. ICP RIE may also allow for selective removal of thematerial of the metal containing layer without removal of the underlyingmaterial (for example the underlying material of the NFT—for example,gold).

FIG. 2D shows the exemplary device after the next optional step,deposition of an overcoat. The device shown in FIG. 2D includes the CNS202, the seed layer 204, the NFT 206, the PNS 208, the pole 210, theintermixed layer 215 and the pole intermixed layer 217 as discussedabove. The device also includes an overcoat layer 218, which couldinclude, for example a carbon based overcoat.

FIG. 2D shows an exemplary device disclosed herein which includes a NFT206, an intermixed layer 215 and a pole 210. The intermixed layer 215can be described as being an outer layer of the NFT 206 into which atomsof a previously deposited metal containing layer have been diffused. Theintermixed layer 215 can be present on one or more than one surfaces ofthe NFT 206. In some embodiments, the intermixed layer 215 can bepresent on at least the air bearing surface of the NFT 206. As shown inFIG. 2D, the air bearing surface 207 of the NFT 206 is the surface thatis adjacent the overcoat layer 218 In some embodiments, the intermixedlayer 215 can be present on only the air bearing surface of the NFT 206.In some embodiments, the intermixed layer 215 can be present on fivesurfaces of the NFT 206 (as depicted in FIG. 4). The intermixed layer215 can have various thicknesses, for example the intermixed layer canhave a thickness of not greater than 30 nm. In some embodiments, theintermixed layer 215 can have a thickness of not greater than 10 nm. Insome embodiments, the intermixed layer 215 can have thickness of notless than 1 nm. In some embodiments, the intermixed layer 215 can have athickness of not less than 0.1 nm.

Exemplary devices can also optionally include an overcoat layer 218, apole intermixed layer 217, a CNS 204, a PNS 208, or any combinationthereof

Also disclosed herein are embodiments where the material of the metalcontaining layer diffuses into the NFT in a fashion that forms anintermixed layer having a gradient of metal containing layer materialcomposition. In some embodiments, a portion of the NFT closest to themetal containing layer (or the surface where the metal containing layerwas located) can have a higher concentration of the metal containinglayer material than a portion of the NFT farther away from the metalcontaining layer (or the surface where the metal containing layer waslocated). For example, in some embodiments where the metal containinglayer was located on at least the air bearing surface (406 as seen inFIG. 4) of the peg, a portion of the intermixed layer closest to the airbearing surface can have a higher concentration of material from themetal containing layer than a portion of the intermixed layer fartherremoved from the air bearing surface.

FIG. 5 also shows another exemplary embodiment where the intermixedlayer need not be located on all portions of all surfaces. As seen inFIG. 5, the intermixed layer 515 is not present on all sides of the NFTpeg (the other components are numbered the same and have the sameidentity as FIG. 2D). This can be formed by either not forming a metalcontaining layer on all portions of all surfaces (for example usingphotolithography processes), or by forming the metal containing layerand either removing portions thereof before diffusion or only diffusingcertain portions of it into the NFT.

In some embodiments, the bulk of the peg could include material from themetal containing layer. In some embodiments, only a portion of the bulkof the peg contains material from the metal containing layer. Such asituation may occur when the peg has relatively good adhesion with thesurrounding material, thereby causing a low defect level at theinterface and preferentially causing the material of the metalcontaining layer to go to the bulk instead of the interface regions. Insome embodiments, the entire bulk of the peg could include material fromthe metal containing layer. Such a situation may occur when the materialof the metal containing layer has a relatively low solubility in thematerial of the peg.

FIGS. 3A to 3E show another exemplary device at various stages of anexemplary process of making. An exemplary device, shown in FIG. 3Aincludes a CNS 302, a seed layer 304, a peg of a NFT 306, a PNS 308, apole 310 and a metal containing layer 312. FIG. 3B shows the deviceafter a portion of the metal containing layer has been made to diffuseinto the NFT. This can be accomplished using various methods, such asthose discussed above. A device at this point includes the CNS 302, seedlayer 304, NFT 306, PNS 308, a pole 310 and in some embodiments, atleast some of the metal containing layer 312 remains. The device alsoincludes an intermixed layer 314 and an optional pole intermixed layer316. The device at this point can be similar, or in some embodiments thesame as that described with respect to FIG. 2B.

In some embodiments, various process steps can also be added in order toincrease the defect density at the NFT/ metal containing layerinterface. Such process steps can include, for example, thermal stress,mechanical stress, or some combination thereof. Such steps can beundertaken before diffusion of the metal containing layer is caused,during diffusion of the metal containing layer, or some combinationthereof. The stress (or stresses) can also be applied in a cyclicfashion. Application of such stresses may improve metal atom diffusionthrough the interface of the NFT and the metal containing layer andthereby improve the coverage of the NFT (e.g., the peg) with theintermixed layer.

FIG. 3C shows the device after a next step, removal. The embodimentdepicted in FIG. 3 C includes the CNS 302, the seed layer 304, the NFT306, the PNS 308, the pole 310, the intermixed layer 315 and theoptional pole intermixed layer 317. The intermixed layer 315 and thepole intermixed layer 317 depicted at this stage may be the same as theintermixed layer 314 and the pole intermixed layer 316 depicted in FIG.3B, or they may be different in that some portion thereof could havebeen removed in the removal step. The device also includes someremaining portion of the metal containing layer, referred to herein asresidual metal containing layer 313. The residual metal containing layer313 could be present because the removal process doesn't effectivelyremove the entire metal containing layer 312 or the removal processcould be designed to leave a portion of the metal containing layer sothat the metal containing layer could diffuse into the NFT during NFTwriting.

Although not depicted in the series of FIGS. 3A to 3E, another optionalstep can also be added at this stage of the process. In someembodiments, once some of the metal containing layer 312 has beenremoved (by whatever removal process is chosen), a subsequent layer canbe deposited. The subsequent layer can be the same material as the metalcontaining layer or a different material. In some embodiments, thesubsequent layer can be a metal. In some embodiments, the subsequentlayer can be the same material as the metal containing layer. It isthought, but not relied upon that the subsequent layer, once oxidizedwill form a denser oxide than the remaining metal containing layer 313would have. The denser oxide layer may be advantageous because of ahigher corrosion resistance.

In some embodiments that include a subsequent layer, the material of themetal containing layer can be chosen for its adhesion properties to thematerial of the NFT (e.g., the material of the peg, for example gold),its oxidation resistance, and its diffusion rate in the gold lattice (itis desired that the diffusion rate in the gold lattice be low to keep itat the outermost surface of the NFT); and the material of the subsequentlayer can be chosen for its ability to form a dense oxide layer uponoxidation. In some embodiments, the subsequent layer can include Si, Ta,Al, Mg, Cr, Y, Mn, or combinations thereof.

FIG. 3D shows the device after a next step, oxidation. The embodimentdepicted in FIG. 3D includes the CNS 302, the seed layer 304, the NFT306, the PNS 308, the pole 310, the intermixed layer 315, the optionalpole intermixed layer 317 and an oxidized layer 319. The oxidized layer319 can be formed by oxidizing the residual metal containing layer 313.The residual metal containing layer 313 can be oxidized, for example byplasma oxidation processes. Formation of the oxidized layer 319 canfunction to minimize the likelihood or prevent electrical shunting ofthe reader. The oxidized layer 319 can have various thicknesses. In someembodiments, the thickness of the oxidized layer 319 can be a functionof the thickness of the residual metal containing layer 313. In someembodiments, the oxidized layer 319 can have a thickness of not greaterthan 10 nm. In some embodiments, the oxidized layer 319 can have athickness of not greater than 5 nm. In some embodiments, the oxidizedlayer 319 can have a thickness of not less than 0.1 nm. In someembodiments, the oxidized layer 319 can have a thickness of not lessthan 0.5 nm. In some circumstances, oxidation of the residual metalcontaining layer 313 could result in overlying layers that ultimatelybecome too thick over the reader of the device. To alleviate any suchproblems, the diffusion process could be combined with methods ofapplying a patterned head overcoat.

FIG. 3E shows the exemplary device after the next step, deposition of anovercoat. The device shown in FIG. 3E includes the CNS 302, the seedlayer 304, the NFT 306, the PNS 308, the pole 310, the intermixed layer315, the pole intermixed layer 317, and the oxidized layer 319 asdiscussed above. The device also includes an overcoat layer 321, whichcould include, for example a carbon based overcoat.

FIG. 3E shows an exemplary device disclosed herein which includes a NFT306, an intermixed layer 315, an oxidized layer 319 and a pole 310. Theintermixed layer 315 can be described as being an outer layer of the NFT306 into which atoms have been diffused from a previously depositedmetal containing layer. The intermixed layer 315 can be present on oneor more than one surfaces of the NFT 306. In some embodiments, theintermixed layer 315 can be present on five surfaces of the NFT 306. Theoxidized layer 319 can be present on one or more than one surfaces ofthe intermixed layer 315. Exemplary devices can also optionally includean overcoat layer 321, a pole intermixed layer 317, a CNS 304, a PNS308, or any combination thereof.

In other optional embodiments (not depicted in the flow of FIGS. 3A to3E), an optional outer layer can be included in the metal containinglayer 312 before diffusion is caused. This optional outer layer can bechosen to serve various purposes. For example, it can prevent orminimize oxidation of the NFT adjacent portion of the metal containinglayer during the step that causes diffusion of the metal containinglayer. Various materials, including gas barrier layers such as DLC,oxides, nitrides and carbides could serve this purpose. An optionalouter layer could also serve as a stop for a removal process. Forexample, an oxide, such as SiO₂ could serve as a stop for a fluorinebased (e.g., CF₄, SF₆, CHF₃) etch, as such the etch would remove theSiO₂ and stop when it reached the NFT adjacent portion of the metalcontaining layer.

In embodiments where an optional outer layer is included an etch, forexample a plasma etch could be used to remove the outer layer (forexample DLC) and part of the NFT adjacent portion of the metalcontaining layer and leave the intermixed layer intact. Such a processwould be repeatable and reliable, and would allow the entire surface ofthe NFT (e.g., the peg) to be covered with the intermixed layer whichcould advantageously act as an adhesion layer and increase the thermalstability of the NFT (e.g., the peg). It should be noted that theoptional outer layer would likely not be included in a final productthat included the use of the outer layer in its manufacture.

The present disclosure is illustrated by the following examples. It isto be understood that the particular examples, assumptions, modeling,and procedures are to be interpreted broadly in accordance with thescope and spirit of the disclosure as set forth herein.

On the ABS surface of a HAMR head (that included a SiO₂ CNS, a Au peg ofa NFT, and a SiO₂ NPS), a variable thickness (given in Table 1 below),variable material (given in Table 1 below) layer was deposited usingmagnetron sputtering and on top of that surface, a 20 Å layer of diamondlike carbon (DLC) film was deposited using cathodic arc to protect themetal layer from oxidation. For the sake of comparison, a 50 Å layer oftantalum oxide (TaO) was also deposited on samples. Sixty (60) examplesof each sample were prepared. The examples were thermally annealed at400° C. for 20 minutes, 1 hour, 3 hours, 6 hours, 12 hours or 48 hours(given in Table 1 below). Critical dimension scanning electronmicroscopy (CD-SEM) was then used to evaluate whether or not the pegrecessed from the ABS surface. Table 1 shows the identities of thesamples and their failure rate as a percentage.

TABLE 1 Failure Rate for Various Structures Time of Anneal 20 1 3 6 1224 48 Layers mins. hour hours hours hours hours hours 50 Å TaO 100 100(98.6% failure when annealing at 300° C. for 3 hours) 30 Å Al/ 87.3 86.820 Å Cr/ 20 Å DLC 25 Å Sn/ 14.29 23.64 40.74 20 Å Cr 20 Å DLC 20 Å Cr/1.9 12.7 28.3 41.8 20 Å DLC 25 Å Pt/ 1.8 3.5 9.0 17.6 34.0 20 Å Cr/ 20 ÅDLC 30 Å Ni/ 5.6 17.0 41.5 100 20 Å Cr/ 20 Å DLC

Energy-dispersive X-ray (EDX) spectroscopy, which is used to measure theconcentration of elements spatially located in an article was used toanalyze some of the samples.

FIG. 6A shows a transmission electron microscope (TEM) image of one ofthe 25 Å Sn/20 Å Cr/20 Å DLC samples. FIG. 6B is a EDX mapping showingthe Cr and Sn concentration at the portion of FIG. 6A shown by the box,FIG. 6C is a EDX mapping showing the Cr concentration at the portion ofFIG. 6A shown by the box, and FIG. 6D is a EDX mapping showing the Snconcentration at the portion of FIG. 6A shown by the box. As seen in theEDX maps, Sn is uniformly distributed in the peg and there is a highconcentration of Cr at the interface.

FIG. 7A shows a SEM image of one of the 25 Å Pt/20 Å Cr/20 Å DLCsamples. FIG. 7B is a EDX mapping showing the Cr and Pt concentration atthe portion of FIG. 7A shown by the box, FIG. 7C is a EDX mappingshowing the Cr concentration at the portion of FIG. 7A shown by the box,and FIG. 7D is a EDX mapping showing the Pt concentration at the portionof FIG. 7A shown by the box. As seen in the EDX maps, Pt is uniformlydistributed in the peg and there is a low concentration of Cr in thepeg, but a relatively high concentration at the interface.

FIG. 8A shows a SEM image of one of the 30 Å Ni/20 Å Cr/20 Å DLCsamples. FIG. 8B is a EDX mapping showing the Ni and Cr concentration atthe portion of FIG. 8A shown by the box, FIG. 8C is a EDX mappingshowing the Cr concentration at the portion of FIG. 8A shown by the box,and FIG. 8D is a EDX mapping showing the Ni concentration at the portionof FIG. 8A shown by the box. As seen in the EDX maps, Ni is uniformlydistributed in the peg and there is a low concentration of Cr in thepeg, but a relatively high concentration at the interface.

One skilled in the art will appreciate that the articles, devices andmethods described herein can be practiced with embodiments other thanthose disclosed. The disclosed embodiments are presented for purposes ofillustration and not limitation. One will also understand thatcomponents of the articles, devices and methods depicted and describedwith regard to the figures and embodiments herein may beinterchangeable.

All scientific and technical terms used herein have meanings commonlyused in the art unless otherwise specified. The definitions providedherein are to facilitate understanding of certain terms used frequentlyherein and are not meant to limit the scope of the present disclosure.

As used in this specification and the appended claims, “top” and“bottom” (or other terms like “upper” and “lower”) are utilized strictlyfor relative descriptions and do not imply any overall orientation ofthe article in which the described element is located.

As used in this specification and the appended claims, the singularforms “a”, “an”, and “the” encompass embodiments having pluralreferents, unless the content clearly dictates otherwise.

As used in this specification and the appended claims, the term “or” isgenerally employed in its sense including “and/or” unless the contentclearly dictates otherwise. The term “and/or” means one or all of thelisted elements or a combination of any two or more of the listedelements.

As used herein, “have”, “having”, “include”, “including”, “comprise”,“comprising” or the like are used in their open ended sense, andgenerally mean “including, but not limited to”. It will be understoodthat “consisting essentially of”, “consisting of”, and the like aresubsumed in “comprising” and the like. For example, a conductive tracethat “comprises” silver may be a conductive trace that “consists of”silver or that “consists essentially of” silver.

As used herein, “consisting essentially of,” as it relates to acomposition, apparatus, system, method or the like, means that thecomponents of the composition, apparatus, system, method or the like arelimited to the enumerated components and any other components that donot materially affect the basic and novel characteristic(s) of thecomposition, apparatus, system, method or the like.

The words “preferred” and “preferably” refer to embodiments that mayafford certain benefits, under certain circumstances. However, otherembodiments may also be preferred, under the same or othercircumstances. Furthermore, the recitation of one or more preferredembodiments does not imply that other embodiments are not useful, and isnot intended to exclude other embodiments from the scope of thedisclosure, including the claims.

Also herein, the recitations of numerical ranges by endpoints includeall numbers subsumed within that range (e.g., 1 to 5 includes 1, 1.5, 2,2.75, 3, 3.80, 4, 5, etc. or 10 or less includes 10, 9.4, 7.6, 5, 4.3,2.9, 1.62, 0.3, etc.). Where a range of values is “up to” a particularvalue, that value is included within the range.

Use of “first,” “second,” etc. in the description above and the claimsthat follow is not intended to necessarily indicate that the enumeratednumber of objects are present. For example, a “second” substrate ismerely intended to differentiate from another infusion device (such as a“first” substrate). Use of “first,” “second,” etc. in the descriptionabove and the claims that follow is also not necessarily intended toindicate that one comes earlier in time than the other.

Thus, embodiments of methods of forming portions of near fieldtransducers (NFTs) and articles formed thereby are disclosed. Theimplementations described above and other implementations are within thescope of the following claims. One skilled in the art will appreciatethat the present disclosure can be practiced with embodiments other thanthose disclosed. The disclosed embodiments are presented for purposes ofillustration and not limitation.

The invention claimed is:
 1. A method comprising: forming at least aportion of a near field transducer (NFT) structure; depositing amaterial onto at least one surface of the portion of the NFT structureto form a metal containing layer, the metal containing layer having athickness of not more than 10 nanometers; subjecting the metalcontaining layer to conditions that cause diffusion of at least aportion of the material into the at least one surface of the portion ofthe NFT structure.
 2. The method according to claim 1, wherein the stepof subjecting the metal containing layer to conditions that causediffusion comprises annealing.
 3. The method according to claim 2,wherein the annealing comprises oven annealing or laser annealing. 4.The method according to claim 2, wherein the annealing comprises heatingthe metal containing layer to at least about 100° C.
 5. The methodaccording to claim 1, wherein the step of subjecting the metalcontaining layer to conditions that cause diffusion comprises applyingan electrical bias to the NFT structure and wherein the step ofdepositing and applying the electrical bias to the NFT structure areundertaken simultaneously.
 6. The method according to claim 5, whereinthe electrical bias is from about 200 V to about 1000 V.
 7. The methodaccording to claim 1, wherein the metal containing layer comprises Cr,Sn, Pt, Y, Pd, Mn, Cu, In, Ni, Pd, Al, Ti, Ta, or combinations thereof.8. The method according to claim 1, wherein the metal containing layercomprises at least two layers.
 9. The method according to claim 8,wherein the metal containing includes an outer layer comprising Si, Ta,Al, Mn, Y, Cr, or combinations thereof.
 10. The method according toclaim 9 further comprising oxidizing at least a portion of the outerlayer.
 11. The method according to claim 1 further comprising removingsome portion of the metal containing layer from the at least one surfaceof the portion of the NFT structure.
 12. The method according to claim11, wherein the step of removing some portion of the metal containinglayer is accomplished with plasma etching, or ion milling.
 13. Themethod according to claim 12, wherein not more than about 0.5 nanometersof the metal containing layer remains on the surface of the NFTstructure.
 14. The method according to claim 1 further comprisingdepositing an overcoat material after some portion of the metalcontaining layer has been removed.
 15. The method according to claim 1further comprising removing a portion of the metal containing layerbefore subjecting it to conditions to cause it to diffuse.
 16. A methodcomprising: forming at least a portion of a near field transducer (NFT)structure; depositing a material onto at least an air bearing surface ofthe NFT structure to form a metal containing layer; subjecting the metalcontaining layer to conditions that cause diffusion of at least aportion of the material into the at least one surface of the portion ofthe NFT; removing at least a portion of the metal containing layer; andapplying an overcoat layer.
 17. The method according to claim 16 furthercomprising oxidizing at least a portion of the metal containing layerafter subjecting it to diffusion causing conditions.
 18. A methodcomprising: forming at least a portion of a near field transducer (NFT)structure; depositing a material onto at least an air bearing surface ofthe NFT structure to form a metal containing layer; removing a portionof the metal containing layer not on the air bearing surface of the NFTstructure; subjecting the metal containing layer to conditions thatcause diffusion of at least a portion of the material into the at leastone surface of the portion of the NFT structure; removing at least aportion of the metal containing layer; and applying an overcoat layer.19. The method according to claim 18 further comprising oxidizing atleast a portion of the metal containing layer after subjecting it todiffusion causing conditions.
 20. The method according to claim 18wherein the step of subjecting the metal containing layer to conditionsthat cause diffusion comprises annealing.